US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory systems and methods of controlling the same, and readable storage media" (Chinese Inventor)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,661, issued on Sept. 1, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory systems and methods of controlling the... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Partial block erase operations in memory devices" (Singaporean, Italian Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,662, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Partial block erase operations in memory devices" was inven... Read More

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor memory device performing program operation" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,663, issued on Sept. 1, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device performing program operation" ... Read More

US Patent Issued to Sandisk Technologies on Sept. 1 for "Sub-block mode back pattern effect compensation" (Chinese, American Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,664, issued on Sept. 1, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Sub-block mode back pattern effect compensation" was... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Memory device capable of changing pass voltage, memory system, and operating method of the memory device" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,665, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device capable of changing pass volta... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Non-volatile memory device and a method of operating the same" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,666, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Non-volatile memory device and a method of o... Read More

US Patent Issued to Winbond Electronics on Sept. 1 for "Memory device and control method thereof" (Taiwanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,667, issued on Sept. 1, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Memory device and control method thereof" was i... Read More

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 1 for "Memory device, memory system, memory controller, and operation method" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,668, issued on Sept. 1, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory device, memory system, memory controll... Read More

US Patent Issued to Micron Technology on Sept. 1 for "Techniques for managing a voltage recovery operation" (American, Japanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,669, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho). "Techniques for managing a voltage recovery operation" was i... Read More

US Patent Issued to Chengdu PBM Technology on Sept. 1 for "High-voltage blocking device, three-dimensional memory, and preparation method thereof" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,670, issued on Sept. 1, was assigned to Chengdu PBM Technology Ltd (Chengdu, China). "High-voltage blocking device, three-dimensional memor... Read More

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US Patent Issued to Yangtze Memory Technologies on Sept. 1 for "Memory systems and methods of controlling the same, and readable storage media" (Chinese Inventor)

US Patent Issued to Micron Technology on Sept. 1 for "Partial block erase operations in memory devices" (Singaporean, Italian Inventors)

US Patent Issued to SK hynix on Sept. 1 for "Semiconductor memory device performing program operation" (South Korean Inventors)

US Patent Issued to Sandisk Technologies on Sept. 1 for "Sub-block mode back pattern effect compensation" (Chinese, American Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Memory device capable of changing pass voltage, memory system, and operating method of the memory device" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Non-volatile memory device and a method of operating the same" (South Korean Inventors)

US Patent Issued to Winbond Electronics on Sept. 1 for "Memory device and control method thereof" (Taiwanese Inventor)

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 1 for "Memory device, memory system, memory controller, and operation method" (Chinese Inventors)

US Patent Issued to Micron Technology on Sept. 1 for "Techniques for managing a voltage recovery operation" (American, Japanese Inventors)

US Patent Issued to Chengdu PBM Technology on Sept. 1 for "High-voltage blocking device, three-dimensional memory, and preparation method thereof" (Chinese Inventors)